飞秒激光辐照硅及硅光电探测器研究-光学专业毕业论文.docx

四川大学硕士学位论文
飞秒激光辐照硅及硅光电探测器研究
光学专业
研究生: 江继军指导教师: 陈建国 罗福
硅半导体材料在集成电路与光电探测器的制造上有着广泛的应用。近年来,硅半导体器件尺寸不断变小,目前已经缩d,N了纳米尺度,载流子在这个尺度内的输运时间大约在ps量级,这促使人们需要对越来越短的时间尺度内硅
的载流子动力学进行研究,传统的电子学方法很难滞毖短时间尺度内发生的
现象进行沏嚏,超陕光谱探测几乎成了进行这类研究的唯—测试手段。此外,
强光环境对硅探测器的应用带来了极其重要的影响,以前实验的加载手段主要是连续的或是脉宽为纳秒量级以上的激光,对于飞秒激光辐照硅探测器的研究还有待大力地开展。
本文对飞秒激光辐照单晶硅后非平衡自由载流子浓度的超快变化过程及飞秒激光辐照硅光电探测器的效应进行了研究。首先在实验中利用飞秒铡9匕泵浦一探针技术,搭建了—个飞秒泵浦_探针反射率测试系统,该系统时间分辨率达到约60fs,保证了我们自群弦咄嘲4量硅反射率的超快变化。藐”獭8量飞秒激光作用后硅的时间分辨瞬态反射率后,利用Drude模型基础上导出的自由子流子浓度和反射率之间的关系,计算出飞秒激光作用过后载流子浓度随时间的驰豫过程;然后基于半导体的速率方程理论,建立了载流子浓度随时间变化的数
学模型。用4阶龙陪库塔法对数学模蝥斯亍了数值计算,与实验中得到的数据
进行比较,所得的数值计算结果与实验结果基本一致。最后用飞秒激光辐照硅
四川大学硕士学位论文
CCD和硅光电二极管,观察到了它们在超短脉冲作用下的失效闽值。
关键词: 飞秒激光泵浦_探针 硅硅光电探测器失效闽值
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四川大学硕士学位论文
Research on Silicon and Silicon Photoelectric Detector
Major:Optics
Postgraduate:J i ang J i jun Supervisor=Chen]ianguo,Luo Fu
Silicon is w;de=4y used in manufacturing inL=grated circuit and photoelecldc recent of silicon devices has been the present time,their size has anived at nanome悟r scale, and itapproximatelytakes severaJ picoseconds,oreven shortertime,forfree carriers to transport during such small ,research of carrier dynamics in silicon oR shorter and shorter自me scale is urgently
on such short time scale ale dimcufHy measured by traditional eledronic ullrafast spectroscopy method is the only
choice of out such ,application of photoelecoic detectors is severely influenced by the past experiments,
people focus on the effect of photoelectric detectors irradiated by corrlJnuous
laser or pulsed laser with pulse width more than efl;ect
of photoelectiic detectors irradiated by惋盯伯蹬泞cond pulsed laser should be
profoundly carried out
In this paper,ultrafast time-resolved calTier density of single-crystal silicon and effect of silicon photoelec埘c detectors irradiated by femtosecond pulsed laser has beerl