光伏组件PID测试.pdf

Insert picture here 10 x 17 cm TüV SüD Greater China TüV SüD: Partnership adds value Potential Induced Degradation (PID)Service Introduction ┰?(??)????????(PID)???? TüV SüD Content?? Potential Induced Degradation (PID) Background Introduction ┰??????????PID????? 1 Standards related to Potential Induced Degradation?PID?┰??????????PID????? 3 What we inspect in Potential Induced Degradation ┰??????????PID??偠?? 2 7 May 2012 2 Present ongoing test at lab??????偠 4 Q&A?乬 5 TüV SüD 5 May 2009 The future is bright Slide 3 Potential Induced Degradation (PID) Background Introduction ?What is PID??М?PID? Potential-induced degradation (PID) of crystalline silicon solar cells was first observed by Sunpower in 2005 It was found that leakage current through the front glass and encapsulation material leads to accumulation of trapped negative charge on at the surface of the cells. The surface passivation provided by the front surface field of these cells degraded. The fill factor (FF), short-circuit current density (Jsc) and open-circuit voltage (Voc) were significantly reduced. PID???Sunpower?2005??????????催??????????????П???????????????∴???????∴????????????FF?Jsc?Voc??????????????? ?In 2010, NREL and Solon demonstrated that PID is a fundamental risk whenever state-of-the-art p-type crystalline silicon solar cells are used in standard modules at high negative bias ?2010??NREL?Solon??????????????p????∴??????????? PID?亢?? TüV SüD Three degradation modes of PID PID??????? 5 May 2009 The future is bright Slide 4 ?Ionic motion in the packaging of the active layer leads to accumulation of charge or charged ions over the semiconductor surface Charge influences surface field of semiconductor active layer. In severe cases, accumulation of mobile ions such as Na in the glass leads to delamination. ??????????????????????????????????????????こ??????????????????????????????????????????????????????????? ?Ionic motion also takes place within the active layer, degrading semiconductor junction p