微波射频器件介绍.ppt

第一单元射频器件简介
理工大学通信工程学院
卫星通信系微波通信教研室
射频微电子学
第次课

一、放大器
二、衰减器
三、倍频器
四、混频器
五、VCO和分频器
六、开关
FREQUENCY DIVIDERS (PRESCALERS) & PHASE / FREQUENCY DETECTORS
FREQUENCY MULTIPLIERS - ACTIVE
MODULATORS - BI-PHASE
MODULATORS - DIRECT QUADRATURE
MODULATORS - VECTOR
PHASE SHIFTERS - Analog
POWER DETECTORS
VOLTAGE CONTROLLED OSCILLATORS*
PHASE LOCKED OSCILLATOR
I/Q MIXERS
PHASE SHIFTERS
HMC619LP5 / 619LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
P1dB Output Power: +27 dBm
Gain: 11 dB
Output IP3: +37 dBm
Supply Voltage: +12V @ 300 mA
50 Ohm Matched Input/Output
32 Lead 5x5mm Lead SMT Package: 25mm2
HMC619LP5 / 619LP5E放大器
HMC619LP5 / 619LP5E放大器
GSM_PHS双模手机射频前端的关键技术研究与性能的优化
PAmodule
收发芯片
HMC619LP5 / 619LP5E放大器
HMC462LP5 / 462LP5E放大器
Noise Figure: dB @ 10 GHz
Gain: 13 dB
P1dB Output Power: + dBm @ 10 GHz
Self-Biased: + @ 66 mA
50 Ohm Matched Input/Output
25 mm2 Leadless SMT Package
The HMC462LP5 & HMC462LP5E are GaAs MMIC
PHEMT Low Noise Distributed Amplifi ers in leadless
5 x 5 mm surface mount packages which operate
between 2 and 20 GHz. The self-biased amplifi er
provides 13 dB of gain, to dB noise fi gure and
+ dBm of output power at 1 dB pression
while requiring only 66 mA from a single +5V supply.
Gain fl atness is excellent from 6 - 18 GHz making the
HMC462LP5 & HMC462LP5E ideal for EW, ECM
RADAR and test equipment applications. The wideband
amplifi er I/Os are internally matched to 50 Ohms
and are internally DC blocked.
HMC462LP5 / 462LP5E放大器
HMC273MS10G是宽带5位正电压控制的GaAsIC数字衰减器,~,插入损耗为2dB,衰减器的离散值为1,2,4,8,16 dB,总衰减量为31 dB。精确值为± dB,5位控制电压为触发电压为0和3~5伏,来选择每一个衰减状态,通过5K欧姆外接电阻提供单电压3~5伏。
HMC273MS10G / 273MS10GE数字衰减器
电气特性Vdd=5V&Vctl=0/Vdd
参数
频率
最小
典型
最大
单位
插入损耗
~


dB
~


dB
~

3
dB
~


dB
衰减范围
~
31
dB
回波损耗
~
11
17
dB
~
14
20
dB
~
10
14
dB
衰减精度
±+3%衰减量
dB

~