surface effects in segmented silicon sensors 2017 j. schwandt参考.pdf

该【surface effects in segmented silicon sensors 2017 j. schwandt参考 】是由【小舍儿】上传分享，文档一共【5】页，该文档可以免费在线阅读，需要了解更多关于【surface effects in segmented silicon sensors 2017 j. schwandt参考 】的内容，可以使用淘豆网的站内搜索功能，选择自己适合的文档，以下文字是截取该文章内的部分文字，如需要获得完整电子版，请下载此文档到您的设备，方便您编辑和打印。NuclearInstrumentsandMethodsinPhysicsResearchA?(????)???–???ContentslistsavailableatScienceDirectNuclearInstrumentsandMethodsinPhysicsResearchAjournalhomepage:ate/,,,,,UniversityofHamburg,LuruperChaussee147,D22761,Hamburg,GermanyarticleinfoabstractArticlehistory:Thevoltagestability,charge-collectionpropertiesanddarkcurrentofsegmentedsiliconsensorsareReceived22March2016in?uencedbythechargeandpotentialdistributionsonthesensorsurface,thechargedistributionintheAccepted8June2016oxideandpassivationlayers,andbySi–,measurementsonteststructuresandsensorsbeforeandafterX-rayirradiation,andTCADsimulationsKeywords:&,iftheouter--chargedensity,Qox,whichdependsontechnology,Thebreakdownbehaviour,darkcurrentandchargecollectioncrystalorientation,doseofionisingradiation,andtheelectricef?ciencyofsegmentedsiliconsensorsdependsontheproperties?,-trapchargedensity,Qborder,,whicharein?–SiO2interfaceandexchangethispapermethodsarepresented,howseveralofthesepara-chargeswiththeSiwithtimeconstants,.–,Qit,whichdependsforX-raydosesupto1GGyandoftheexplanationofthedose-ontechnology,ionisingdoseandtheFermienergyattheandhumiditydependentchargecollectionef?:Biasvoltageatthebackwithrealisticparameterscanexplainsurprisingobservationsandside,,workinprogressonthe?eldandthesensorsurface(solidline),(dashedlines).Wenotethatthechargedensitiesdependonposition,iftheelectric?-ohmicdetector-gradeSi[1]C–,relevantforsurfaceeffects,heeffectiveoxidechargedensityeffboundaryconditionsforsimulations,,whichNQQox=(ox+border+Qqit)/0forionisationdosesupto1GGy+:(elementarychargeq0).Ithasbeenfoundthatbeforeirradiation10?211?2Nox≈10cmforSiwith??100crystalorientation,and≈-surfacechargedensity,Qos,whichcanexhibitatimefor??–100kGy,dependingonthevendor,12?·,,Jsurf,whichE-mailaddress:Joern.******@().isrelatedtoQit,hasbeenmeasured[2].BeforeirradiationJsurfisahttp://dx./.-9002/&:,etal.,NuclearInstruments&MethodsinPhysicsResearchA(2016),http://dx./../NuclearInstrumentsandMethodsinPhysicsResearchA?(????)???–???QosQoxpassivationpassivationAlSiOAl2+p+pn-BulkQborderQitVbias+,increasesto≈μ6A/cm2atadoseofabout10MGy,“lost”holesversustimeforap+nSistripsensorilluminatedwith670nmlight,afterchangingthebiasvoltagefrom500to200Vforrelativehu-TheAGIPDsensor[3]essfuloptimi-miditiesof78%and<1%.sationofa500μmthickp+npixelsensorforX-raydosesupto1GGyathighoperatingvoltages[4].,dependenceofthecurrentmeasuredinthecurrent-collectionwhichdependontherelativehumidity,-ring,whichsurroundsthepixels,forX-+nSistripsensorwaschangedfrom100MGyforasensorproducedbySINTEFwithstandardtech-500Vto200V,andthechargecollectionforehpairs,producedbynology:Thebreakdownvoltagedecreasesfromabout900Vtolaserlightof670nmwavelengthinjectedin-:Forhighoxidestrips,hasbeenmeasuredat20°CandRH≈78%and<1%.AtchargesandthestandardSiO2thicknessof700nm,thereisa670nmthelight-attenuationlengthinSiisabout3μm,andthesinglenarrowhigh-??eldclosetotheSi–?Reducingtheoxidethicknessto250nmresultsintwoeldpeaks:?gurethetimedependenceofthenumberofOneatthecorneroftheimplantationandonebelowtheedgeofholes“lost”,,thepredictedbreakdownvoltagefor50ns,?78%,12?2Nox=·<1%.TheshapeofthewiththeoptimisedSiO2thicknessof250nm,,howeverthetimeconstantsdifferbyafactorshowsthatthebreakdownvoltageexceeds900V[4].Theincrease≈-irradiatedsensorat800VisduetotheInordertounderstandthiseffect,we?-surfaceresistivityusingthecircularGate-Controlled-Diodesensorhasbeenexposedtoadoseofafew100Gy,andthusdoes(GCD)describedinRef.[2],irradiatedbyX-raystoadoseof1GGy.–(gate),thecurrentvoltagecharacteristics,surfacegenerationcurrentandiscorrectlypredictedusingthewhenchangingthegatevoltagefrominversionviadepletiontosurface-generationcurrentdensitymeasuredusingGate-Con--peakisduetothesurface-generationtrolled-,Isurf,fromtheradiation-damagedSi–,-surfaceresistivityandchargecollectionandthetimedependenceIGCD(t)measuredforRHvaluesbetween30and46%.UsingIVGCD(gate),wederiveVgate(t),.[5]itisreportedthat,afterchangingthebiasvoltage,–voltagecharacteristicsforthecurrentcollectionringofapixelsensorfordifferentX-,:,etal.,NuclearInstruments&MethodsinPhysicsResearchA(2016),http://dx./../NuclearInstrumentsandMethodsinPhysicsResearchA?(????)???–???-surfaceresistivityasfunctionofrelativehumidityusingaGate-Controlled-Diode(GCD).Left::?46%and820sat30%.Thecorre-,R□,·Ω10and65·,theR□valuesaretoohigh,tobedeterminedwithSofarinthesimulations,-independenteffectiveToinvestigatetheimpactoftheouter-surfaceresistivityontheeffeffoxide-chargedensity,Qox=qN0ox,andasurface-currentgen-chargecollectionofSistripsensors,intheTCADsimulationahigh-?rstapproximation,astheoxide-resistivitylayerwasputontopoftheSiO2layer,thebiasvoltagechargeintroductionratebyionisingradiationdependsontherampedfrom0toà600V,andthetimedependenceofthepo-electric?eld,andthechargestateoftheborder-?eldlines60strapsonthe?eldandontheFermilevelattheSi-à,possibleshort-timeeffectsduringirradiationhavenot?alleldlinesintheSioriginateatthestripimplantations,,resultsarepresentedon:120minmost?eldlinescrosstheSi–-tionforthechangeis:Immediatelyafterbiasing,-rayirradiation.?effpo-?eldattheSi–nentalongtheoutersurface,?eldtimeconstantisproportionaltoR□,.[6]?rstattempttoseparateQoxandQitandtodetermineDit,thenp+sensors,whentheoxide-chargeincreasesduetolow-doseir-energydistributionoftheinterfacetrapsintheSi-,-andn-MOSFETs[7],,?+-linesinannpsiliconstripsensorwithouter-surfaceresistivityR□=·,andright120minafterreachingthebiasvoltageofà-sprayisolationof5·1011cm?2,andaneffectiveoxide-chargedensityof1010cm-:,etal.,NuclearInstruments&MethodsinPhysicsResearchA(2016),http://dx./../NuclearInstrumentsandMethodsinPhysicsResearchA?(????)???–????3hIdsVdsandlasteduntilthedoseshownintheinsertwasreached(,).?SiO2SiO2SiO2SiO22increaseofNoxaftert0isinterpretedasthechargingupofAlAlAlAlAlbordertraps:Fort<0,umu-SiO2SiO2SiO2SiO2250nm++++++++++++++++lationandtheelectric?eldpointedfromtheSiOintotheSi,ap++++++++++++++p+pp2+++++++++++++++++++++++++++++++++++++++++++fractionofthepositively-chargedbordertrapsgotneutralisedby+++++++++++++++++++++++++,thesituationChanneleffisreversed,,althoughthen-Siintegrateddoseisthesameafteranirradiationstepandbeforethen+effAlnextone,-?rstquantitativerresultsonthecharginganddischargingofbordertraps,werefertoRef.[7].Inordertostudyboth?elddirectionsforbothelectron--accumulationandinversionlayers,measurementsonp-andn--MOSFETbiasedininversion(Vgate<Vth),.[8].effthedrain-sourcecurrentisparametrisedasInordertoseparatethecontributionsofQoxandofQittoQox,anddetermineD,theenergydistributionoftheinterfacetrapsinWitIC=|?|μVVV,theSi-bandgap,thesubthreshold-currentmethodforMOSFETsdspoxLdsgateth()1describedinRef.[9],,Vth,thedrain-sourcevoltage,Vds,thep-MOSFETirradiatedininversionindicatethatforirradiatedsen-–effholemobility,μp,theoxidecapacitanceperunitarea,Cox,andthesorsQitcontributes3050%toQox,andthattheinterfacetrapswidth-over-lengthratio,-chargedensityisaredistributedovertheentireSi-bandgapwithanincreaseto-=??++eff2,ψ?Cox0ox()thbmsox()=?-gappotentialandtheFermilevelinthen-Siofthep-MOSFET,andInthispaperweshowthatsurfaceeffectshavetobetakenintotheAl-Siwork-functiondifference.