如何学好平面设计.docVol. 32, No. 6 Journal of Semiconductors June 2011
A 3 A sink/source current fast transient response low-dropout Gm driven
linear regulator
Chu Xiuqin(初秀琴)1; , Li Qingwei(李庆委)1; 2; , Lai Xinquan(来新泉)1; 2, Yuan Bing(袁冰)1,
Li Yanming(李演明)3, and Zhao Yongrui(赵永瑞)2
1Institute of Electronic CAD, Xidian University, Xi’an 710071, China
2Key Laboratory of High-Speed Circuit Design and EMC, Ministry of Education, Xidian University, Xi’an 710071, China
3School of Electronic and Control Engineering, Chang’an University, Xi’an 710064, China
Abstract: A 3 A sink/source Gm-driven CMOS low-dropout regulator (LDO), specially designed for low input
voltage and low cost, is presented by utilizing the structure of a current mirror Gm (transconductance) driving
technique, which provides high stability as well as a fast load transient response. The proposed LDO was fabricated
by a m standard CMOS process, and the die size is as small as mm2. The proposed LDO dissipates 220 A
of quiescent current in no-load conditions and is able to deliver up to 3 A of load current. The measured results
show that the output voltage can be resumed within 2 s with a less than 1 mV overshoot and undershoot in the
output current step from – to A with a s rising and falling time at three 10 F ceramic capacitors.
Key words: sink/source; linear regulator; load transie
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