产品规格书MXP6008CT(精选).pdf

MXP6008CT Datasheet
N-Channel MOSFET
Applications:
a
● Power Supply VDSS RDS(ON)(MAX) ID
● DC-DC Converters60V 8mΩ 109A
Features:
● Lead Free
● Low RDS(ON) to Minimize Conductive Loss
● Low Gate Charge for Fast Switching Application
● Optimized BVDSS Capability
Ordering Information
Park Number Package Brand
MXP6008CT TO-220 MXP
Absolute Maximum Ratings TC=25℃ unless otherwise specified
SymbolParameter Value Unit
VDSS Drain-to-Source Voltage 60 V
a
ID Continuous Drain Current 109
A
IDM Pulsed Drain Current ***@VG=10V 436
Power Dissipation 150 W
PD
Derating Factor above 25℃ W/℃
VGS Gate-to-Source Voltage +/-20 V
Single Pulse Avalanche Energy
EAS 800 mJ
(L=1mH, IAS=40A)
IAS Pulsed Avalanche Energy Figure 9 A
TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃
Thermal Resistance
SymbolParameter Min Typ Max Unit Test Conditions
Water cooled heatsink, PD
RθJC Junction-to-Case adjusted for a peak junction
℃/W
Temperature of 175℃
RθJA Junction-to-Ambient 62 1 cubic foot chanber, free air
Note:
a: Calculated continuous current based upon maximum allowable junction temperature +175℃. Package limitation current is 80A.
©MaxPower Semiconductor Inc. MXP6008CT Ver Jan. 2011
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OFF Characteristics TJ=25℃ unless otherwise specified
SymbolParameter Min Typ Max Unit Test Conditions
BVDSS Dra