1200V增强型碳化硅纵向结型场效应晶体管功率模块
1200V Enhancement-mode SiC VJFET Power Modules
李兴鲁查祎英胡冬青译
北京工业大学
Translated by Li Xinglu, Zha Yiying, Hu Dongqing
Beijing University of Technology
摘要:最近的模块研发工作已经生产出封装在SP1模组中的快速开关,1200V、13mΩ、增强型SiC JFET半桥模块。这些模块由36mm2 SiC VJFET和23mm2肖特基管的并联组合而成。在ID=100A条件下,-cm2的比导通电阻。开关测试采用了标准的双脉冲感性负载电路,在600V、100 A、温度分别为25℃和150℃的条件下,得到了历史最低的总开关损耗——100A、150℃。本文详细介绍测试的开关性能、所采用的栅极驱动电路,以及获得这些结果推荐使用的缓冲器。
关键词:模块 SiC 栅极驱动开关损耗缓冲器
Abstract: Latest module research has made possible the production of fast switch that packed in SP1 module suit, an enhanced SiC JFET half-bridge module with 1200V and 13mΩ. The modules are parallel-connected with 36mm2 SiC VJFET and 23mm2 SBD. Under ID=100A, it achieves the specific on-resistance -cm2。. Standard dual-pulse inductive load circuit is applied to test the switch. Under the condition of 600V, 100A, with temperature respectively being 25℃ and 150℃, it achieves record-lowest general switch loss: with 100A, and 150℃, it is . The article introduces in detail the function of the switch, the grid drive circuit applied, and the bumper mended to achieve the rusults.
Keywords: Module, SiC, Grid drive, Switch loss, Bumper
[中图分类号]TN86 [文献标识码] A 文章编号:1561-0349(2011)12-
1 引言
人们对SiC功率晶体管感兴趣的大部分应用,都是要求更高功率的场合,考虑到降低成本、缩减系统面积、便于冷却等因素,它们通常采用模块封装。为满足这种需求,Microsemi PPG应用SemiSouth实验室的常闭型1200V JFET和1200V二极管,制造了封装在相位补偿半桥SP
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