p-,,itleavesbehindanelectronvacancyor"hole"intheregularsiliconlatticeUndertheinfluenceofanexternalvoltage,boththeelectronandtheholecanmoveacrossthematerialInann-typesemiconductor,thedopantcontributesextraelectrons,dramaticallyincreasingtheconductivityInap-typesemiconductor,thedopantproducesextravacanciesorholes,whichlikewiseincreasetheconductivityP-andN--typeandp---typematerial,extraholesinthebandgapallowexcitationofvalencebandelectrons,-njunctionTheopencirclesontheleftsideofthejunctionaboverepresent"holes"-,binewithholes,creatinga"depletionregion".TheenergylevelsketchaboverightisawaytovisualizetheequilibriumconditionoftheP--njunctionAp-,-njunctionisformed,someofthefreeelectronsinthen--conductinglayerMoreDetailInthep-eptorimpuritiesandinthen-typeregionthereareextraelectronsWhenap-njunctionisforme
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