Reliability,Failure Rate & MTBF 可靠性、失效率和MTBF概念.pdf

Reliability,FailureRate&MTBF可靠性、失效率和MTBF概念ConstructionofIGBTmodulewithbaseplateIGBT模块的基本构造(含基板)Page2Wear-outfailuresIGBT模块的基本构造决定了它的老化失效机理EndofLife:bondwireconnections绑定线连接老化所造成的使用寿命终结EndofLife:solderconnections焊接层连接老化所造成的使用寿命终结Destructionofhousing/terminals封装/端子的老化所造成的使用寿命终结Otherfailures(climaticstresses,chemicalstresses)其它因素(如气候变化、化学腐蚀)所造成的老化失效Page3BondWireConnectionWear-outFailure绑定线连接老化失效的典型式样Bond-wirelift-off(left)andreconstructionofAlmetallization(right)绑定线脱离(左)和铝金属化层重组(右)Bond-wireheelcracks绑定线跟部位置的断裂Page4SolderConnectionWear-out焊接层(DCB-基板)的老化FatigueofSolderConnectionbetweenDCBandBaseplate陶瓷衬底和基板之间焊接层的老化衰变Coefficientofthermalexpansion(CTE)几种材料的热膨胀系数Page5DestructionofHousing/Terminals封装/端子的老化损坏Frame/TerminalCracks(duetoThermalShockorVibration)封装框架/端子的断裂(热冲击或振动)Page6ReliabilityTests(StandardIndustrialModule)可靠性测试项目(标准工业级模块)ForinternaluseonlyPage7FailureCriteriainReliabilityTest可靠性测试的失效检验标准ForinternaluseonlyPage8PowerCycling(PC)Test可靠性测试之一:功率循环测试PowerCycling(PC)Stressingthechip/(forexample):Tj=50K:TJ1=75C,TJ2=125CFailureCriteria:AnIncreasedSaturationVoltageof5%PowerCycling:Medium&HighPowerModules(Tjmax=125°C)1,0E+111,0E+101,0E+09dottedlines:estimated1,0E+081,0E+07n()TractionModules1,0E+06StandardModules1,0E+051,0E+0410100DeltaTjinKForinternaluseonlyPage9ThermalCycling(TC)Test可靠性测试之一:热循环测试ThermalCycling(TC)Heatingup&Coolingdownthecase(baseplate)(forexample):Tj=80K:TC1=20C,TC2=100CFailureCriteria:AnIncreasedThermalResistanceof20%ForinternaluseonlyPage10