论文英文翻译.docTemperatureDependenceofSi-BasedThin-FilmSolarCellsFabricatedonAmorphousto Microcrystailine SiliconTransitionPhaseKobsakSRIPRAPHAIhsanulAfdiYUNAZSeungYeopMYONGAkiraYAMADAandMakotoKONAGAIDepartmentofPhysicalElectronics,TokyoInstituteofTechnology,2-12T-S9-9,0-okayama,Mcguro-ku,Tokyo152-8552,JapanQuantumNanoeloctronicsResearchCenter,TokyoInstituteofTechnology,2T2T-S9-9,0-okayan)a,Meguro-ku,Tokyo152-8552,Japan(ReceivedJune5,2007;acceptedAugust20,2007;publishedonlineNovember6,2007)Thetemperaturedependenceofsilicon(Si)-basedthin-门lmsingle-junctionsolarcells,whoseintrinsicabsorberswerefabricatedonthetransitionphasebetweenhydrogenatedamorphoussilicon(a~Si:II)atodmicrocrystallinesilicon(mc-Si:I1),wasinvestigated・Byvaryingthehydrogendilutionratio,wide-band-gapprotocrystal1inesilicon(pc-Si:H)andmc-Si:-currentdensity-voltage(Photo-J-V)characteristicsweremeasuredunderAML5illuminationatambienttemperaturesintherangeof25-75=C・Wefoundthatthesolarcellswithpc-Si:H,whichexistsjustbelowthea-Si:Htomc-Si:IItransitionboundary,showedthelowesttemperaturecoefficient(TC)forconversionefficiencyandopen-circuitvoltage(Voc),whilethesolarcellsfabricatedattheonsetofthea~Si:Htomc-Si:-Si:Hisapromisingmaterialfortheabsorberlayerofthesinglejunctionorthetopcelloftandemsolarcellsthatoperateinhightempe
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