2Wavemechanics波动力学Carriers载体Photon光子Electrons电子的Workfunction功函数Holes孔Wave-particledualityprinciple波粒二象性原则Effectivemass有效质量Probabilitydensityfunction概率密度函数Insulator绝缘子Pauliexclusionprinciple泡利不相容原理Semiconductor半导体Allowedenergyband允许的能带Directbandgapsemiconductor直接带隙半导体Forbiddenenergyband禁带Indirectbandgapsemiconductor间接带隙半导体Valenceband价带Fermi-Diracdistributionfunction费米-狄拉克分布函数Conductionband导带Fermienergy费米能级3Densityofelectrons(holes)电子密度(pensatedsemiconductor补偿半导体IntrinsicFermilevel内在的费米能级Chargeneutrality电荷中和Donorimpurity施主杂质Impurity()diffusioncoefficientimpurity()eptorimpurity受主杂质Nondegeneratesemiconductor非退化半导体Extrinsicsemiconductor本征半导体Degeneratesemiconductor退化半导体Intrinsicsemiconductor本征半导体Majoritycarriers多数载流子Minoritycarriers少数载流子Electron(Hole)concentration电子(空穴)的浓度4Transport运输Diffusion扩散Drift(current)漂移(电流)Diffusioncurrent扩散电流Hole(Electron)mobility孔(电子)迁移Carrierlifetime载流子寿命Hole(Electron)driftcurrentdensity孔(电子)漂移电流密度(In)Directbandgap(在)bination载流子复合Driftvelocitysaturation饱和漂移速度Excesscarrier过剩载流子Hallvoltage(effect)霍尔电压(效果)6Channelregion沟道区Principleofoperation操作原理Thresholdvoltage阈值电压MOScapacitorMOS电容器Energy-umulationlayer积累层Induceddepletionregion诱导的耗尽区Inversionlayer逆温层Inversionchargedensity反转电荷密度Workfunctiondifferences工作性能差异Polysilicongate多晶硅栅Oxidecharge氧化层电荷Flat-Bandvoltage平带电压Enhancement-modedevice增强模式器件Depletion-modedevice耗尽型器件Stronginversion较强的逆温Weakinversion弱反转Soure(drain
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