Koepenicker Str. 325 ? D-12555 Berlin ? Tel.: +49 30 65 76 21 92 ? Fax: +49 30 65 76 21 93 ? ******@ micro resist technology 1 — Processing guidelines — Negative Tone Photoresist Series ma-N 1400 Characteristics ma-N 1400 is a negative tone photoresist series design ed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities. - well suitable as an etch mask exhibiting high dry and wet etch resistance - excellent for pattern transfer with PVD and lift-off processes - high thermal stability of the resist patterns - aqueous alkaline development Process flow for reactive ion etching (RIE) Pr ocess flow for pattern transfer with physical vapour deposition (PVD) and lift-off Physical properties of the resist solution Resist ma-N 1405 ma-N 1407 ma-N 1410 ma-N 1420 Film Thickness [μm] ± ± 0. 1 ± ± Dynamic Viscosity [mPa s] 9 ± 1 11 ± 1 13 ± 1 29 ± 1 Density [g cm ] ± ± ± ± Spin coated at 3000 rpm for 30 s 25 °C, 1000 s This information is based on our experience and is, to the best of our kno
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