溅射沉积zno薄膜结构和光学性能研究.doc

溅射沉积ZnO薄膜结构和光学性能研究
摘要
ZnO是一种重要的Ⅱ-Ⅵ族化合物半导体材料,因其优异的光学、电学性质而得到广泛的应用,因而ZnO薄膜的制备和研究具有重要意义。
本文采用磁控溅射法制备ZnO薄膜,再以X射线衍射仪、扫描电子显微镜和紫外-可见透射光谱仪对所沉积薄膜样本的结构和光学性能进行分析。主要研究了工作气压、Ar/O2比、溅射时间以及退火温度对ZnO薄膜样品性质的影响。结果发现,随着空气退火温度上升,ZnO薄膜结晶性和择优生长特性都明显升高,所得薄膜在可见光范围内有高光透过率,同时退火处理也提高了ZnO薄膜致密度。磁控溅射沉积ZnO薄膜最佳参数为:,Ar/O2比为4:1。同时适当温度退火可改善ZnO薄膜质量。
关键词:ZnO薄膜,磁控溅射,溅射参数,退火
Abstract
ZnO is an important Ⅱ- Ⅵ compound semiconductor material, and with its excellent optical and electrical properties, it is widely used. So the preparation and study of ZnO thin films is ing more and more important.
In this paper, ZnO thin films were prepared by ron sputtering. And then we use X-ray diffraction, scanning electron microscopy and UV - visible transmittance spectroscopy to analyze the structure and optical properties of
the thin film. In this paper, we analyzed the influence of deposition pressure, Ar /O2 ratio, sputtering time and annealing temperature on the properties of ZnO thin film samples.
The result show that with the increasing of the annealing temperature, the crystallinity and preferential orientation of ZnO thin film increased obviously. And the films has a higher light transmittance in the visible range. The annealing treatment also increased the density of the ZnO thin films . The most suitable ron sputtering parameter could be :the working pressure is , the Ar / O ratio is 4:1. Besides, the proper temperature annealing can improve the quality of ZnO films.
Keywords:ZnO films,ron sputtering,Deposition parameters, Annealing
目录
1 绪论............................................................................................................................................. 5
ZnO的结构特点及其性质................................................................................................ 5
ZnO薄膜的结构特点............................................................................................ 5
电学性质.....................................................