快速热退火制备多晶硅薄膜的研究.pdf

第 28 卷第 4 期电子元件与材料
2009 年 4 月 PONENTS AND MATERIALS Apr. 2009
研究与试制
快速热退火制备多晶硅薄膜的研究
王红娟, 吕晓东, 黄义定,仲志国
(南阳师范学院物理与电子工程学院,河南南阳 473061)

摘要: 采用等离子体增强化学气相沉积法(PECVD)沉积非晶硅薄膜,然后在快速热退火炉中进行退火。研究
了升温速率、降温速率对晶化的影响。结果表明:退火中,升温速率越大,越不利于晶核的形成;降温速率较小时
(100℃/60 s),形成的晶粒尺寸较小,晶化情况较好,晶化率估算达 %。
关键词: 半导体材料;快速热退火;多晶硅薄膜;升温速率;晶粒度
doi: .1001-
中图分类号: TM23 文献标识码:A 文章编号:1001-2028(2009)04-0055-03
Study of preparing polycrystalline silicon thin film by RTA
WANG Hongjuan, LÜ Xiaodong, HUANG Yiding, ZHONG Zhiguo
(Physics﹠Electronic Engineering College of Nanyang Normal University, Nanyang 473061, Henan Province, China )
Abstract: The a-Si∶H thin films were deposited by PECVD and then were annealed in RTA furnace. The
microstructure of thin films was investigated by XRD and Raman influences of the heating rate and the cooling
rate were studied. The results show that the heating rate has effect on the formation of nucleus. The bigger the heating rate
is, the less the nuclei forms; the bigger the cooling velocity rate(100 ℃/60 s) is, the smaller the grain size is. The
crystallization ratio is about %.
Key words: semiconductor materials; rapid thermal annealing (RTA) ; polycrystalline silicon thin film; heating rate; grain size

由于多晶硅薄膜成本低、易于大面积制作,因而影响作了研究[6,7],另外,退火过程中升温速率、降
适用于图像传感器、薄膜晶体管和太阳能