半导体名词解释.doc

several group number, then with b ± a, =c,c is is methyl b two vertical box between of accurate size. Per-2~3 measuremen进洁净室之前﹒须经空气喷洗机将尘埃吹掉。
 
Alignment对准
目的：在IC的制造过程中，必须经过6至10次左右的对准、曝光来定义电路图案，对准就是要将层层图案精确地定义显像在芯片上面。
方法：利用芯片上的对准键﹒一般用十字键﹒和光罩上的对准键合对为之
several group number, then with b ± a, =c,c is is methyl b two vertical box between of accurate size. Per-2~3 measurement, such as proceeds of c values are equal and equal to the design value, then the vertical installation accurate. For example a, b, and c valueswhile on horizontal vertical errors for measurement, General in iron angle code bit at measurement level points grid errors, specific method is from baseline to methyl vertical box center line distance for a,, to b vertical box distance for b, list can measured2
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several group number, then with b ± a, =c,c is is methyl b two vertical box between of accurate size. Per-2~3 measurement, such as proceeds of c values are equal and equal to the design value, then the vertical installation accurate. For example a, b, and c valueswhile on horizontal vertical errors for measurement, General in iron angle code bit at measurement level points grid errors, specific method is from baseline to methyl vertical box center line distance for a,, to b vertical box distance for b, list can measured
方式：，
、电组合代替人眼，即机械式对准。
 
ALLOY/Sinter融合
ALLOY之目的在使铝与硅基〔SILICON SUBSTRATE〕之接钢有OHMIIC特性，即电压与电流成线性关系。
ALLOY也可降低接触的阻力值。
 
AL/SI铝/硅 靶
此为金属溅镀时所使用的一种金属合金材料利用AR游离的离子，让其撞击此靶的外表，把AL/SI的原子撞击出来，而镀在芯片外表上，一般使用之组成为AL/SI(1%)，将此当做组件与外界导线连接。
  
AL/SI/CU铝/硅/铜
金属溅镀时所使用的原料名称，通常是称为TARGET，% 铜，1% %铝，一般制程通常是使用99%铝 1%硅．后来为了金属电荷迁移现象(ELEC TROMIGRATION) %铜降低金属电荷迁移
 
ALUMINUM铝
此为金属溅镀时，所使用的一种金属材料，利用AR离子，让其撞击此种材料做成的靶外表﹒把AL原子撞击出来，而镀在芯片外表上，将此做为组件与外界导线之连接。
 
ANGLE LAPPING角度研磨
ANGLELAPPING 的目的是为了测量JUNCTION的深度，所作的芯片前处理，这种采用光线干预测量的方法就称之ANAGLE LAPPING。公式为Xj =l/NF，即JUNCTION深度等于入射光波长的一半与干预条纹数之乘积。但渐渐的随着VLSI组件的缩小，准确度及精密度都无法因应，如SRP(SPREADING RESISTANCE PRQBING)