towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors changlong liu资料.pdf

该【towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors changlong liu资料 】是由【司棋夸克】上传分享，文档一共【10】页，该文档可以免费在线阅读，需要了解更多关于【towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors changlong liu资料 】的内容，可以使用淘豆网的站内搜索功能，选择自己适合的文档，以下文字是截取该文章内的部分文字，如需要获得完整电子版，请下载此文档到您的设备，方便您编辑和打印。#####################-018-0032-7NPGAsiaMaterialsessTowardssensitiveterahertzdetectionviathermoelectricmanipulationusingransistorsChanglongLiu1,2,LeiDu1,2,WeiweiTang1,2,DachengWei3,JinhuaLi4,LinWang1,2,5,GangChen1,2,XiaoshuangChen1,2,5andWeiLu1,2,5AbstractGraphenehasbeenhighlysoughtafterasapotentialcandidateforhot-electronterahertz(THz)detectionbene?tingfromitsstrongphotonabsorption,fastcarrierrelaxation,andweakelectron-,todate,graphene-basedthermoelectricTHzphotodetectionishinderedbylowresponsivityowingtorelativelylowphotoelectricef?,weprovideastraightforwardstrategyforenhancedTHzdetectionbasedonantenna-ransistorswiththeintroductionofsymmetricpaired??eldandfreehotcarriersinthegraphene-channelthroughdifferentcontactingcon?“bias-?eldeffect”canbeactivated,whichleadstoadrasticenhancementinTHzdetectionabilitywithmaximumresponsivityofupto280V/-noiselimitedminimumnoise-equivalentpower(NEP)of100pW/-():,;1234567890():,;scalable,wafer-levelproductionofhigh-,11,whichindicatestheyarepromisingRecently,two-dimensional(2D)materials(transitionmaterialswithgreatpotentialinoptoelectronicdevicesformetaldichalcogenides(TMDs),graphene,munication,sensing,andimaging,particularlyinthephorus,etc.)haveignitedintensiveinterestduetotheirvisibleandnear-,itisratherdif-novelelectronicandphotonicproperties,whicharedis-?culttoextendthespectralresponseof2Dmaterialstotinctfromthoseoftheirbulkcounterparts,suchasdefect-themid-/far-infraredandterahertz(THz)regimeowing–freetopologicaltransport13,lineardichorism4,5,super-,7,andplasmonics8,,suchasbandgapengineeringandheterogeneousexperimentallythatfew-layer2Dmaterialscanstronglyintegrationwithquantumdotsorother2Dmaterials(vanderWaalsheterostructures),havebeendedicatedto–,lightabsorp-Correspondence:LinWang(******@.)ortioninnarrow-gap2DmaterialssuchasTMDsdecreasesGangChen(******@.)orXiaoshuangChen(******@?cantlywhenthephotonenergyisfarbelowthecn)interbandthreshold,similartothebehaviorofotherbulk1StateKeyLaboratoryofInfraredPhysics,ShanghaiInstituteofTechnicalPhysics,ChineseAcademyofSciences,500YutianRoad,Shanghai200083,,gaplessgraphene,inprincipal,can2UniversityofChineseAcademyofSciences,No19AYuquanRoad,ic?eldsoveramuch100049,:ChanglongLiu,LeiDu,WeiweiTang.?TheAuthor(s),whichpermitsuse,sharing,adaptation,distributionandreproductioninanymediumorformat,aslongasyougiveappropriatecredittotheoriginalauthor(s)andthesource,monslicense,’monslicense,’monslicenseandyourintendeduseisnotpermittedbystatutoryregulationorexceedsthepermitteduse,,visit/licenses/by//.#####################-basedTHzdetectorunderbias-?eldcon?guration:thegraphene-channeliscontactedbytwolog-antennaarmsconsistingofCr/Austacksandtwopaired?ngersinthemiddle,whichresultsinafour-terminalelectricalcon?gurationmarkedA,B,C,~6μmanddifferentwidthsWof60and6μminthestudieddevices;theantennaarmfeaturesanouterradiusofR~1mmandacirculartoothspanangleofπ/,%,byutilizingtheDrudeThedetectorwasfabricatedusingchemicalvaporbinationwithheavydeposition(CVD)-grownsingle-layergraphene,whichchemicaldoping,onecanachieve40%photonabsorptionwastransferredontoahighlyresistiveSi/SiO2(300nm)inasinglegraphenelayerinthemid-/far-–,graphenehighlyresistiveSisubstrateinsteadofahighlydopedoneisoneofthemostpreferredmaterialsforTHzoptoelec-wastoeliminatethere?ectivelossoftheincidentwave,--ofplasmaself--periodicplasmaself-mixingeffectcanbeachievedviatheasym-antennatomaximizethe?eldcon?nementalongthemetricalantennacouplingofaTHz?eldbetweenachannelratherthanperpendiculartoit(,duringwhichthenonlinearrecti-(a),(b)).Thus,particularasymmetricalboundarycondi-?cationofcarriertransportleadstodirectdetectionwithtionsrelatedtopreviouslyreportedphotothermoelectric–~20V/W1922.(PTE)18,19andplasma-waveeffects21,22werenotcon-Moreover,-basedplasmaetchingwasperformedontacting,whichproducesaaftertheantennapatterningandlift-offprocessestoformSeebeckcoef?cientdifferenceanddirectphotocurrentagraphene-channel(formoredetails,,Sup-alongthechannelduetometal-inducedasymmetricalplementaryInformation).Additionalpairedcontact?n-doping18,andtheresponsivitycanreachashighas15V/-performancegraphene-baseddeviceshavemiddleofchannelbyelectronbeamlithography,resultingeincreasinglycriticaltosatisfyingtherequirementsinafour-terminalcon?guration24,,thecurrentimplementationoflabeledA,B,C,,thedevicedirectTHzdetectionishinderedbythelackofsuf?cientresponsedependedspeci?--?eldandtheformedgraphene-channelwascon?rmedbyRamanicsizeeffectstomanipulatethehot-carrierscatteringspectroscopy,andthecurrent--THz?,whichenableswitchingbetweenthethermo-inferredfromtheblueshiftoftheopticalphonon-relatedphotovoltaic(PV)andphotoconductive(PC)modes,GpeakintheRamanspectrumthattheFermileveltherebyproducingpreviouslyunattainablelevelsofpho-(,SupplementaryInformation).#####################,bSimulatednear-??ngers,,dRespectivespectralpro?lesofthedesigneddeviceswithoutandwithpaired??,-absorption,weperformedafull-vectorFiniteDifferenceure2(a),(b)showthecorrespondingamplitudesoftheTimeDomainsimulationtobetterunderstandtheelec-THz??gurationsshowsthattheamplitudeoftheTHz?eldparametersofthemodelstrictlyfollowthestructureofforthelattercon?,whichindicatesthattheadditionalpairedperfectconductor,withperfectlymatchedlayer(PML)-withoutandwithpaired?(c),ure2showstheTHznear-?elddistributionnearthe(d),respectively,?#####################?eldamplitudeisattributedtothenon-equilibriumhot-(λ~8mm)whenthetriggeredbytheasymmetricalTHznear-?elddistributiondiameteroftheantenna(D~2mm)isconsistentwiththealongthechannelduetothedislocationofpaired?ngerswavelengthλ/icwaveintheduringfabrication(,Supple-substrate().forhighlyresistivesilicon).Ontheotherhand,theFormally,thethermoelectriceffectcanbegivenby26?ZincorporationofthepairedngersdoesnotclearlyalterdTh?IphàAD/SexTdxoreTS1eTàxS2eTx?ThexTthespectralproleoftheantenna,andabroadphoto-?1above-mentionedsimulatedresultswereconrmedπ22σexperimentallywiththefabricateddevice,asshowninS?àkBT1dμwhere3eσdE~15V/KistheSeebeckcoef-,whichshowsthatthephotocurrentresponsesatE??cientretrievedfromtheMottrelation,whichdependson27,,ourstrategyofusingthedopinglevelofgraphene,anddh/-zeroSeebeckcoef?-–VcharacteristicsofthecientorbythelocalSeebeckcoef?-channelinourdevi-AgilentB2912A(,ceswashomogeneous,withaFermi-leveldifferencelessSupplementaryInformation).(-Information)27;therefore,thedifferencewasnegligibleforacterizedusingalock-intechniquewithareferencesignalproducingasizableSeebeckcoef?,respect,?eldcouplingalongthechannel,ratherthanfromdif-THzwavewasouter-coupledwithahornantennaataferencesintheSeebeckcoef?(hole)diffusionfromthehottothecoolside,asshowninmechanismandresponsespeedofthedevices,,anetcurrent?owsalongthechannelintheUradiationwasusedunderfaston/,dshow3Dschematicsofthewide-(W~60carriersafterlocalphotonabsorptioncanbeestimatedIμm,withRAD~100Ω)andnarrow-(W~6μm,withRADfollowingthezero-biasphotocurrentph-ADbasedontheΔT=ΔUS=IR/S~1kΩ)channeldevices,,eshowrelationshiphph-AD/ph-ADAD,whereΔUthemeasuredphotocurrentIph--ADistheopen-,,forthetemperaturerisehforhotcarriersshouldbe<10andnarrow-,theslitwidths60Kforthewide-andnarrow-cha