Speaker:ZuxinChenFastresponseultravioletGa-dopedZnObasedphotoconductivedetectorBackgroundTheexperimentalfrompaperCritiqueonthispaper:outlineUltravioletdetectorsphotovoltaicdetectorPhotoconductordetectorP-njunctionphotodiodesPINjunctionphotodiodesSchottkybarrierphotodiodesUltravioletdetectorsZnOisawidebandgap(Eg=)(60ev),ZnOhasattractedincreasingattentioninrecentyearsforpotentiallow-,-,high-qualityGa-dopedZnOepitaxialfilmshavefewgrainboundariessothatsuchlargephotocurrentwithweakincidentpowerhasbeenseen,indicatingaresponsivityof1187A/(2000A/Wata5Vbias).Inthispaper,:Photocurrent:itdoesn’:,5VbiasRisetime:8nsFulltime::1200A/WEg(MgxZn1-xO)=xEg(MgO)+(1-x)Eg(ZnO)Duringthepastfewtears,impressiveresearcheffortshavebeenconcentratedonthefabricationandperformanceofZnO-,ZnO-basedUVphotodetectorsshowgoodresponsivity,highUV/visiblecontrastratio,highspeedandlownoisecharacteristics,,PLD,MBEandMOCVDareverysuitablemethodstofabricateZnO-basedUVphotodetectors,especiallyforZnMgOsolar-,thetechnologyofZnO-
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