高介电、高压电常数压电陶瓷的分析.docx

中文摘要
本文采用固相法制备了Nb205掺杂Pbl.。La。()(x=, )(简称PLZT)压电陶瓷和Sb203掺杂PZT压电陶瓷,通过X射线衍
射(XRD)对合成后的材料晶相进行了分析,用扫描电子显微镜(SEM)观察
了样品表面的显微结构,并且讨论了组成和烧结温度对材料介电、压电性能以及温度稳定性的影响,通过试验确定了金属化温度、极化温度和极化场强。通过研究ZffTi比对Nb205掺杂PLZT系统性能的影响发现:三方相和四方相共存的准同型相位于一个组成范围内,在1060℃的预烧温度、1240℃的烧结温度且保温2h的条件下,当Zr/Ti=,得到综合性能优良的压电材料:相对介电常数
s五/晶=3100,介电损耗tan万=%,压电常数d33=550pCm,机电耦合系数
K=66%,居里温度Tc=210℃;Nb”部分置换(ZrTi)4+,增强了陶瓷的介电、压电活性,降低了居里温度,陶瓷体的温度稳定性良好,当Zr/Ti=,谐振频率的温度变化率最小,.25~80℃×10’℃,此时磁的变化率也最低,。4/℃。上述研究结果在实际生产中有较强的实用意义。
此外,研究了Sb203含量和Zr/Ti比对Sb掺杂PZT压电陶瓷在准同型相界附近的介电、压电性能的影响。Sb”置换Pb2+,极大的增强了PZT的介电、压电性能,在900℃的预烧温度、1250℃的烧结温度且保温2h的条件下,当Sb203
=%,Zr/Ti=53/47时,系统的综合性能最佳:占五/晶=2100,tan万=%,
d33---450pC/N,Kp=%,Tc=300℃。 材料的居里温度提高,一定程度上扩宽了材料的使用温度。
关键词:PZT PLZT介电、压电性能准同型相界温度稳定性
ABSTRACT
The 。()I—x/403(x=,)(PLZT)piezoelectric ceramics doped by Nb205 and the PZT piezoelectric ceramics samples doped by Sb203 were prepared by conventional solid solution X-ray diffraction
(XRD)and the scanning electronic microscope(SEM)were applied to analyze phases and microstructure, effects of position and the sintering temperature on the dielectric and piezoelectric properties and temperature stability of
the system were also ,the polarization temperature of the ceramics,the sintering temperature of the pole and the intensity of the electric field were confirmed by study on the properties of the PLZT system doped by Nb on Zr/Ti ratio indicated that the MPB of the tetragonal and rhombohedral phase lay in a position optimum properties were obtained with Zr/Tj= at calcination temperature of 1060℃and sintering temperature of 1240。 main parameters:占3T3/s0=3100,tan万=%,d33=550pC/N,Kp=66%,Tc=210℃.T11e
dielectric and pielectric property increased with the Nb5+rap/acing the(ZrTi)4+,the
Curie temperature declined SO piezoceramics have a go