闪速存储器at29c010a英文数据手册.pdf

Features
• Fast Read Access Time - 70 ns
• 5-Volt Only Reprogramming
• Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 1024 Sectors (128 bytes/sector)
– Internal Address and Data Latches for 128 Bytes
• Two 8K Bytes Boot Blocks with Lockout
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time - 10 ms 1-Megabit
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 50 mA Active Current (128K x 8)
– 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles 5-volt Only
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs Flash Memory
• Commercial and Industrial Temperature Ranges
Description AT29C010A
The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 70 ns with power dissipation of just 275 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
less than 100 µA. The device endurance is such that any sector can typically be writ-
ten to in excess of 10,000 times. (continued)
Pin Configurations DIP Top View
Pin Name Function NC 1 32 VCC
A16 2 31 WE
A0 - A16 Addresses A15 3 30